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| Datasheet File OCR Text: |
| ST 2SA1020 PNP Silicon Epitaxial Transistor Power amplifier application Power switching application 1. Emitter 2. Collector 3. Base TO-92 Plastic Package Absolute Maximum Ratings (Ta = 25 OC) Parameter Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Collector Power Dissipation Junction Temperature Storage Temperature Range Symbol -VCBO -VCEO -VEBO -IC Ptot Tj Tstg Value 50 50 5 2 900 150 - 55 to + 150 Unit V V V A mW O C C O Characteristics at Ta = 25 OC Parameter DC Current Gain Current Gain Group at -VCE = 2 V, -IC = 0.5 A at -VCE = 2 V, -IC = 1.5 A Collector Base Cutoff Current at -VCB = 50 V Emitter Base Cutoff Current at -VEB = 5 V Collector Emitter Breakdown Voltage at -IC = 10 mA Collector Emitter Saturation Voltage at -IC = 1 A, -IB = 0.05 A Base Emitter Saturation Voltage at -IC = 1 A, -IC = 0.05 A Transition Frequency at -VCE = 2 V, -IC = 0.5 A Collector Output Capacitance at -VCB = 10 V, f = 1 MHz Symbol O Y hFE hFE hFE -ICBO -IEBO -V(BR)CEO -VCE(sat) -VBE(sat) fT Cob Min. 70 120 40 50 - Typ. 100 40 Max. 140 240 1 1 0.5 1.2 - Unit A A V V V MHz pF SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) (R) Dated : 25/12/2008 ST 2SA1020 SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) (R) Dated : 25/12/2008 |
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